pdp spm tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com march 2007 FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery FVP12030IM3LEG1 energy recovery feature ? use of high speed 300v igbts with parallel frds ? single-grounded power supply by means of built-in hvic ? sufficient current driving cap ability for igbts due to adding a buffer ? isolation rating of 1500vrms/min. ? low leakge current due to using an insulated metal sub- strates applications ? energy recovery part of a pdp (plasma display panel) general description it is an advanced smart power module(spm tm ) that fairchild has newly developed and designed to provide very compact and optimized performance for the energy recovery circuit of pdp driving system. it combines optimized circuit protection and drive matched to low-loss and high speed igbts. under voltage lock-out protection function enhances the system reli- ability . the high speed built-in hvic provides opto-couplerless single power supply igbt gate dr iving capability that futher reduce the overall system size of pdp sustaining boards. package outlines figure 1.
2 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery pin configurations figure 2. top view
3 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery pin descriptions pin number pin name pin descriptions 1 coml low-side signal ground 2 vinl low-side signal input 3 vccl low-side supply voltage for hvic 4 vbl low-side floating supply voltage for buffer ic and igbt driving 5 gl low-side gate 6 vsl low-side floating ground for buffer ic and igbt driving 7 ignd ims ground 8 comh high-side signal ground 9 vinh high-side signal input 10 vcch high-side supply voltage for hvicg 11 vbh high-side floating supply voltage for buffer ic and igbt driving 12 gh high-side gate 13 vsh high-side floating ground for buffer ic and igbt driving 14 ch high-side igbt collector 15 eh high-side igbt emitter 16 kh high-side diode cathode 17 al low-side diode anode 18 cl low-side igbt collector 19 el low-side igbt emitter
4 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery internal equivalent circuit and input/output pins (bottom view) figure 3. hvic vb out vs com in vcc (18) cl (17) al buffer ic out com com in vcc (19) el (15) eh (16) kh hvic (14) ch buffer ic out com com in vcc vb out vs com in vcc (6) vsl (10) vcch (5) vbl (3) vccl (12) gh (8) comh (13) vsh (1) coml (2) vinl (9) vinh (4) gl (11) vbh (7) ignd
5 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery absolute maximum ratings (t c = 25c, unless otherwise specified) notes : 1 pulse width = 100 sec, duty = 0.1; half sine wave *i cp limited by max t j thermal resistance symbol parameter conditions rating units vcc control supply voltage applied between vccl-coml, vcch - comh 20 v vbs control bias voltage applied between vbl - vsl, vbh - vsh 20 v vin input signal voltage applied between vinl-coml,vinh - comh -0.3~17 v symbol parameter cond itions rating units vce collector to emitter voltage between cl to el , between ch to eh v gh-eh =v gl-el =0v , i ch =i cl =250 a 300 v vrrm peak repetitive reverse voltage between kh to eh , between cl to al i ah =i al =250 a 300 v between ch to eh , between cl to el i ah =i al =250 a 300 v vin input signal voltage vinl, vinh -0.3 to vcc+0.3 v i c collector current continuous between cl to el , between ch to eh 120 a i f(av) average rectified forward current between eh to kh , between al to cl per diode 30 a between eh to ch between el to cl 10 a i cp pulsed collector current between cl to el , between ch to eh (note1) 300 a i fp pulsed diode current between eh to kh , between al to cl (note1) 300 a between eh to ch between el to cl per diode (note1) 100 a symbol parameter conditions rating units p d igbt dissipation tc = 2 5 c per igbt 117 w tc=100 c per igbt 47 w frd dissipation tc = 2 5 c per diode 109 w tc=100 c per diode 43 w tj operating junction temperture -20 ~ 150 c t c module case operation temperature -20 ~ 125 c t stg storage temperature -40 ~ 125 c v iso isolation voltage 60hz, sinusoidal, ac 1 minute, connection pins to ims substrate 1500 v rms symbol parameter conditions min. max. units r th(j-c) junction to case thermal resistance between ch to eh, between cl to el per igbt - 1.07 c/w between eh to kh, between al to cl - 1.15 c/w between ch to eh, between cl to el per diode - 3.70 c/w
6 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery electrical characteristics (t c = 25c, unless otherwise specified) notes : 2 t on and t off include the propagation delay time of internal drive ic. for the detailed information, please see figure 4. figure 4. switching time definition symbol parameter conditions min. typ. max. units i qcc quiescent vcc supply current vcc = 15v vinl , vinh = 0v vccl-coml , vcch-comh - - 100 a i qbs quiescent vbs supply current vbs = 15v vinl, vinh= 0v vbl- vsl, vbh- vsh - - 500 a uv bsd supply circuit under volt- age protection detection level 10.1 11.3 12.5 v uv bsr reset level 10.5 11.7 12.9 v vin (on) on threshold voltage applied between vinl-coml , ,vinh - comh 3.0--v vin (off) off threshold voltage - - 0.8 v symbol parameter condition min. typ. max. units v ce(sat) igbt collector-emitter saturation voltage vcc = vbs = 15v vin = 5v i c = 25a, t j = 25c - - 1.4 v i c = 120a, t j = 25c - 1.9 - v v f diode forward voltage between cl to al between kh to eh i f =30a, t j = 25c - - 1.4 v between eh to ch between el to cl i f =10a, t j = 25c - - 1.7 v td on switching times vce=200v, vcc= vbs=15v ic = 20a vin = 0v ? v , inductive load t c = 25c (note2) 230 ns t r 55 ns td off 270 ns t f 48 ns i ces igbt collector-emitter leakage current v ce = 300v - - 250 a i r diode anode-cathode leakage current between cl to al between kh to eh v anode-cathode =300v 250 a between eh to ch between el to cl v anode-cathode =300v - - 250 a i c v ce v ce i c v in v in 10% of i c t d(on) t r 10% of i c 90% of i c t d(off) t f 90% of i c
7 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery typical performance characteristics figure 5. typical output characteristics figure 6. typical output characteristics figure 7. typical forward voltage drop figure 8. typical forward voltage drop figure 9. fbsoa 0246 0 30 60 90 120 150 180 20v 15v 12v 10v v ge =8v t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 30 60 90 120 150 180 20v 15v 12v 10v v ge =8v t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 between kh to eh between cl to al t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage. v f [v] t c = 25 o c between ch to eh between cl to el 0.1 1 10 100 1000 0.01 0.1 1 10 100 collector current, ic [a] collector-emitter voltage, v ce [v] single nonrepetitive pulse tc=25 o c curves must be derated linearly with increase in temperature 100 s 50 s 1ms ic max (pulsed)
8 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery mechanical characteristics and ratings figure 10. flatness measurement position parameter conditions limits units min. typ. max. mounting torque mounting screw: - m3 recommended 0.62n?m 0.51 0.62 0.72 n?m device flatness note figure 5 0 - +100 m weight - 13.4 - g
9 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery detailed package outline drawings figure 11.
10 www.fairchildsemi.com FVP12030IM3LEG1 rev. a FVP12030IM3LEG1 energy recovery tm rev. i24 trademarks the following are registered and unregistered trademarks fairchild se miconductor owns or is authori zed to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further no tice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the ri ghts of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semicon ductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? gto? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information for mative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchil d semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. tm
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